| Disclaimers |
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| 1. All data was obtained from searches as posted below |
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Alvesta |
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Corona |
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Emcore |
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Emcore |
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Emcore |
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Opticomm |
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Optronics |
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Ortel |
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Phasebridge |
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Photovoltaic |
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Tecstar |
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| 2. Each allocation (CPV, FO, LED, NA) is the list creators best guess. These may or may not be for the technology or company as assigned. |
| 3. Most allocations have been made based on the title of the application or a very brief read of the patent abstract and are the list creators intepretation. Many may not be correct. |
| 4. The list below should be read with the above disclaimers in mind. These are very rough assignations based on a brief review. Not based on intensive technical background or research but opinion. |
| 5. It is important to do your own review and not take any representation made below as anything more than my opnion. |
| Technology |
Patent Number |
|
Description |
| CPV |
5,262,360 |
 |
AlGaAs native oxide |
| CPV |
TW261310B |
|
Alkyl push flow for vertical flow rotating disk reactor |
| CPV |
WO03054926 |
|
AN APPARATUS AND METHOD FOR INTEGRAL BYPASS DIODE IN SOLAR CELLS |
| CPV |
WO0226435 |
|
APPARATUS AND METHOD FOR CONTROLLING TEMPERATURE UNIFORMITY OF SUBSTRATES |
| CPV |
6,492,625 |
 |
Apparatus and method for controlling temperature uniformity of substrates |
| CPV |
US2003140962 |
|
Apparatus and method for integral bypass diode in solar cells |
| CPV |
6,864,414 |
 |
Apparatus and method for integral bypass diode in solar cells |
| CPV |
6,680,432 |
 |
Apparatus and method for optimizing the efficiency of a bypass diode in multijunction solar cells |
| CPV |
US2002040727 |
|
Apparatus and method for optimizing the efficiency of germanium junctions in multi-junction solar cells |
| CPV |
7,339,109 |
 |
Apparatus and method for optimizing the efficiency of germanium junctions in multi-junction solar cells |
| CPV |
US5544618 |
|
Apparatus for depositing a coating on a substrate |
| CPV |
5,336,324 |
 |
Apparatus for depositing a coating on a substrate |
| CPV |
WO0107691 |
|
APPARATUS FOR GROWING EPITAXIAL LAYERS ON WAFERS |
| CPV |
US2002104476 |
|
Apparatus for growing epitaxial layers on wafers by chemical vapor deposition |
| CPV |
6,547,876 |
 |
Apparatus for growing epitaxial layers on wafers by chemical vapor deposition |
| CPV |
WO0246864 |
 |
AUTOMATED WAFER HANDLING WITH GRAPHIC USER INTERFACE |
| CPV |
6,483,137 |
 |
Capacitor utilizing c-axis oriented lead germanate film |
| CPV |
6,616,857 |
 |
C-axis oriented lead germanate film |
| CPV |
6,410,343 |
 |
C-axis oriented lead germanate film and deposition method |
| CPV |
US6197121 |
 |
Chemical vapor deposition apparatus |
| CPV |
US6080241 |
|
Chemical vapor deposition chamber having an adjustable flow flange |
| CPV |
6,689,949 |
 |
Concentrating photovoltaic cavity converters for extreme solar-to-electric conversion efficiencies |
| CPV |
6,818,818 |
 |
Concentrating solar energy receiver |
| CPV |
US6653215 |
|
Contact to n-GaN with Au termination |
| CPV |
US5759281 |
 |
CVD reactor for uniform heating with radiant heating filaments |
| CPV |
5,288,327 |
 |
Deflected flow in chemical vapor deposition cell |
| CPV |
TW586150B |
 |
Electrode structures for p-type nitride semiconductors and methods of making same |
| CPV |
6,190,925 |
 |
Epitaxially grown lead germanate film and deposition method |
| CPV |
6,737,693 |
 |
Ferroelastic integrated circuit device |
| CPV |
6,495,378 |
 |
Ferroelastic lead germanate thin film and deposition method |
| CPV |
6,590,243 |
 |
Ferroelastic lead germanate thin film and deposition method |
| CPV |
6,878,292 |
 |
Filter device |
| CPV |
TW249246B |
|
Gallium nitride-based devices and manufacturing process |
| CPV |
US2006154455 |
|
Gallium nitride-based devices and manufacturing process |
| CPV |
20040119063 |
|
Gallium nitride-based devices and manufacturing process |
| CPV |
20060154455 |
|
Gallium nitride-based devices and manufacturing process |
| CPV |
4,772,356 |
 |
Gas treatment apparatus and method |
| CPV |
4,838,983 |
 |
Gas treatment apparatus and method |
| CPV |
4,969,416 |
 |
Gas treatment apparatus and method |
| CPV |
5303079 |
Apr-94 |
Gnauck et al. |
| CPV |
6,214,678 |
 |
Growth technique for low noise high electron mobility transistors by metal organic vapor phase epitaxy |
| CPV |
5,656,538 |
 |
Halide dopant process for producing semi-insulating group III-V regions for semiconductor devices |
| CPV |
6,248,992 |
 |
High gain photoconductive semiconductor switch having tailored doping profile zones |
| CPV |
6,113,705 |
 |
High-speed rotational vapor deposition apparatus and high-speed rotational vapor deposition thin film method |
| CPV |
4,926,154 |
 |
Indium arsenide magnetoresistor |
| CPV |
US6368404 |
|
Induction heated chemical vapor deposition reactor |
| CPV |
6,368,404 |
 |
Induction heated chemical vapor deposition reactor |
| CPV |
5,284,519 |
 |
Inverted diffuser stagnation point flow reactor for vapor deposition of thin films |
| CPV |
FR2870046 |
|
Lateral conduction schottky diode with plural mesas |
| CPV |
20050179104 |
 |
Lateral conduction schottky diode with plural mesas |
| CPV |
5,980,983 |
 |
Liquid precursors for formation of metal oxides |
| CPV |
6,258,157 |
 |
Liquid precursors for formation of metal oxides |
| CPV |
US5835678 |
|
Liquid vaporizer system and method |
| CPV |
WO9814633 |
|
LIQUID VAPORIZER SYSTEM AND METHOD |
| CPV |
5,835,677 |
 |
Liquid vaporizer system and method |
| CPV |
5,835,678 |
 |
Liquid vaporizer system and method |
| CPV |
6,180,270 |
 |
Low defect density gallium nitride epilayer and method of preparing the same |
| CPV |
CN1658371 |
|
Low doped layer for nitride-based semiconductor device |
| CPV |
20050179107 |
|
Low doped layer for nitride-based semiconductor device |
| CPV |
4,978,938 |
 |
Magnetoresistor |
| CPV |
CN101083290 |
|
Metamorphic layers in multijunction solar cells |
| CPV |
20070277873 |
|
Metamorphic layers in multijunction solar cells |
| CPV |
6,409,828 |
 |
Method and apparatus for achieving a desired thickness profile in a flow-flange reactor |
| CPV |
US6349270 |
 |
Method and apparatus for measuring the temperature of objects on a fast moving holder |
| CPV |
WO2004042824 |
|
METHOD AND APPARATUS OF MULTIPLEJUNCTION SOLAR CELL STRUCTURE WITH HIGH BAND GAP HETEROJUNCTION MIDDLE CELL |
| CPV |
7,071,407 |
 |
Method and apparatus of multiplejunction solar cell structure with high band gap heterojunction middle cell |
| CPV |
US7198988 |
 |
Method for eliminating backside metal peeling during die separation |
| CPV |
6,402,836 |
 |
Method for epitaxial growth on a substrate |
| CPV |
5,891,769 |
|
Method for forming a semiconductor device having a heteroepitaxial layer |
| CPV |
5,516,722 |
 |
Method for increasing doping uniformity in a flow flange reactor |
| CPV |
5,696,023 |
 |
Method for making aluminum gallium arsenide semiconductor device with native oxide layer |
| CPV |
6,033,926 |
 |
Method for making multiple wavelength semiconductor lasers on a single wafer |
| CPV |
6,113,993 |
 |
Method of coating a substrate with a calcium phosphate compound |
| CPV |
5,550,081 |
 |
Method of fabricating a semiconductor device by oxidizing aluminum-bearing 1H-V semiconductor in water vapor environment |
| CPV |
6,410,346 |
 |
Method of forming ferroelastic lead germanate thin films |
| CPV |
US2002182848 |
|
Method of improving the fabrication of etched semiconductor devices |
| CPV |
6,645,848 |
 |
Method of improving the fabrication of etched semiconductor devices |
| CPV |
US2004171245 |
|
Method of making an aligned electrode on a semiconductor structure |
| CPV |
5,117,543 |
 |
Method of making indium arsenide magnetoresistor |
| CPV |
4,772,296 |
 |
Method of purifying and depositing group IIIa and group Va compounds to produce epitaxial films |
| CPV |
6,188,012 |
 |
Methods and systems for a solar cell concentrator |
| CPV |
5,851,905 |
 |
Methods of forming indium gallium nitride or aluminum indium gallium nitride using controlled hydrogen gas flows |
| CPV |
US6420252 |
|
Methods of forming robust metal contacts on compound semiconductors |
| CPV |
6,420,252 |
 |
Methods of forming robust metal contacts on compound semiconductors |
| CPV |
6,531,324 |
 |
MFOS memory transistor & method of fabricating same |
| CPV |
6,503,314 |
 |
MOCVD ferroelectric and dielectric thin films depositions using mixed solvents |
| CPV |
4,714,091 |
 |
Modular gas handling apparatus |
| CPV |
6,156,967 |
 |
Modular glass covered solar cell array |
| CPV |
6,407,327 |
 |
Modular, glass covered solar cell array |
| CPV |
EP1078393 |
 |
MODULAR, GLASS-COVERED SOLAR CELL ARRAY |
| CPV |
US2003020127 |
|
Monolithically integrated sensing device and method of manufacture |
| CPV |
6,579,741 |
 |
Monolithically integrated sensing device and method of manufacture |
| CPV |
6,580,139 |
 |
Monolithically integrated sensing device and method of manufacture |
| CPV |
20030020127 |
 |
Monolithically integrated sensing device and method of manufacture |
| CPV |
6,380,601 |
 |
Multilayer semiconductor structure with phosphide-passivated germanium substrate |
| CPV |
6,281,022 |
 |
Multi-phase lead germanate film deposition method |
| CPV |
6,429,443 |
 |
Multiple beam electron beam lithography system |
| CPV |
5,567,980 |
 |
Native oxide of an aluminum-bearing group III-V semiconductor |
| CPV |
US6765242 |
 |
Npn double heterostructure bipolar transistor with ingaasn base region |
| CPV |
US2004119486 |
|
On-wafer burn-in of semiconductor devices using thermal rollover |
| CPV |
6,677,172 |
|
On-wafer burn-in of semiconductor devices using thermal rollover |
| CPV |
6,936,483 |
 |
On-wafer burn-in of semiconductor devices using thermal rollover |
| CPV |
4,931,132 |
 |
Optical control of deposition of crystal monolayers |
| CPV |
5,244,829 |
 |
Organometallic vapor-phase epitaxy process using (CH.sub.3).sub.3 As and CCl.sub.4 for improving stability of carbon-doped GaAs |
| CPV |
4,939,456 |
 |
Position sensor including a thin film indium arsenide magnetoresistor on a permanent magnet |
| CPV |
5,801,961 |
 |
Power management system for a semiconductor processing facility |
| CPV |
5,264,040 |
 |
Rapid-switching rotating disk reactor |
| CPV |
5,284,805 |
 |
Rapid-switching rotating disk reactor |
| CPV |
CN1465094 |
|
Rector having a movale shuter |
| CPV |
WO02099861 |
|
RECTOR HAVING A MOVALE SHUTER |
| CPV |
JP2007110123 |
|
RELIABLE INTERCONNECTION IN SOLAR BATTERY INCLUDING INTEGRATED BYPASS DIODE |
| CPV |
20070079863 |
 |
Reliable interconnection of solar cells including integral bypass diode |
| CPV |
6,825,519 |
 |
Selectively deposited PGO thin film and method for forming same |
| CPV |
7,115,811 |
 |
Semiconductor body forming a solar cell with a bypass diode |
| CPV |
6,413,839 |
 |
Semiconductor device separation using a patterned laser projection |
| CPV |
5,581,571 |
 |
Semiconductor devices and methods |
| CPV |
6,753,273 |
 |
Semiconductor devices and methods |
| CPV |
6,773,949 |
 |
Semiconductor devices and methods |
| CPV |
7,227,173 |
 |
Semiconductor devices and methods |
| CPV |
5,373,522 |
 |
Semiconductor devices with native aluminum oxide regions |
| CPV |
7,115,896 |
 |
Semiconductor structures for gallium nitride-based devices |
| CPV |
US2002127824 |
|
Semiconductor wafer protection and cleaning for device separation using laser ablation |
| CPV |
6,849,524 |
 |
Semiconductor wafer protection and cleaning for device separation using laser ablation |
| CPV |
USD552552S |
|
Serial to parallel electrical transceiver |
| CPV |
EP1110247 |
|
SOLAR CELL HAVING A FRONT-MOUNTED BYPASS DIODE |
| CPV |
US2002144724 |
|
Solar cell having a front-mounted bypass diode |
| CPV |
6,103,970 |
 |
Solar cell having a front-mounted bypass diode |
| CPV |
6,326,540 |
 |
Solar cell having a front-mounted bypass diode |
| CPV |
6,617,508 |
 |
Solar cell having a front-mounted bypass diode |
| CPV |
US2002179141 |
|
Solar cell having an integral monolithically grown bypass |
| CPV |
EP1443566 |
|
Solar cell having an integral monolithically grown bypass diode |
| CPV |
US2004040593 |
|
Solar cell having an integral monolithically grown bypass diode |
| CPV |
6,278,054 |
|
Solar cell having an integral monolithically grown bypass diode |
| CPV |
6,359,210 |
 |
Solar cell having an integral monolithically grown bypass diode |
| CPV |
6,600,100 |
 |
Solar cell having an integral monolithically grown bypass diode |
| CPV |
JP2006013531 |
|
SOLAR CELL HAVING BYPASS DIODE |
| CPV |
US2008092943 |
|
SOLAR CELL STRUCTURE WITH LOCALIZED DOPING IN CAP LAYER |
| CPV |
EP1715529 |
 |
Solar cell with feedthrough via |
| CPV |
US2003196992 |
|
Sub-micron adjustable mount for supporting a component and method |
| CPV |
US2004217092 |
|
Sub-micron adjustable mount for supporting a component and method |
| CPV |
WO03075044 |
|
SUB-MICRON ADJUSTABLE MOUNT FOR SUPPORTING A COMPONENT AND METHOD |
| CPV |
7,075,028 |
 |
Sub-micron adjustable mount for supporting a component and method |
| CPV |
7,126,078 |
 |
Sub-micron adjustable mount for supporting a component and method |
| CPV |
6,533,867 |
 |
Surface sealing showerhead for vapor deposition reactor having integrated flow diverters |
| CPV |
US2003047132 |
|
Susceptorless reactor for growing epitaxial layers on wafers by chemical vapor deposition |
| CPV |
US2003111009 |
|
Susceptorless reactor for growing epitaxial layers on wafers by chemical vapor deposition |
| CPV |
6,506,252 |
 |
Susceptorless reactor for growing epitaxial layers on wafers by chemical vapor deposition |
| CPV |
6,685,774 |
 |
Susceptorless reactor for growing epitaxial layers on wafers by chemical vapor deposition |
| CPV |
6,726,769 |
 |
Susceptorless reactor for growing epitaxial layers on wafers by chemical vapor deposition |
| CPV |
20030047132 |
|
Susceptorless reactor for growing epitaxial layers on wafers by chemical vapor deposition |
| CPV |
20030111009 |
|
Susceptorless reactor for growing epitaxial layers on wafers by chemical vapor deposition |
| CPV |
6,293,502 |
 |
System and method for enhanced solar array pointing in sun-nadir steering |
| CPV |
5,252,512 |
 |
TEOV doping of gallium arsenide |
| CPV |
US7381886 |
 |
Terrestrial solar array |
| CPV |
4,997,677 |
 |
Vapor phase reactor for making multilayer structures |
| CPV |
JP2007150326 |
|
VIA STRUCTURE OF SOLAR CELL HAVING BYPASS DIODE |
| CPV |
7,235,139 |
 |
Wafer carrier for growing GaN wafers |
| CPV |
US5840124 |
 |
Wafer carrier with flexible wafer flat holder |
| CPV |
US6001183 |
|
Wafer carriers for epitaxial growth processes |
|